ASTM F1709-97 (2016) PDF

Full title and description

Standard Specification for High Purity Titanium Sputtering Targets for Electronic Thin Film Applications — ASTM F1709 −97 (reapproved 2016). The specification defines purity grades, maximum allowable metallic and nonmetallic impurities, physical attributes (including grain size), analytical methods, ordering information, and packaging requirements for titanium sputtering targets used in semiconductor and electronic thin‑film fabrication.

Abstract

This specification covers pure/high‑purity titanium sputtering targets intended as raw material for fabricating semiconductor electronic thin films. It establishes grade designations (e.g., 4N, 4N5, 5N) based on total metallic impurity limits, specifies suites of elements to be analyzed, recommends analytical techniques (for example, GDMS for trace metals and fusion/gas extraction for C/O/S), and includes requirements for cleanliness, grain size, and packaging. The document was reapproved in 2016 and later withdrawn by ASTM in late 2023.

General information

• Status: Withdrawn (withdrawal published November 2023; withdrawn without replacement following disbanding of Committee F01).
• Publication date: Current edition approved May 1, 2016 (designation shown as F1709‑97 with reapproval year 2016).
• Publisher: ASTM International.
• ICS / categories: 31.120 (Electronic display devices / electronic thin film manufacturing category).
• Edition / version: Designation F1709 −97 (Reapproved 2016), DOI 10.1520/F1709‑97 (document historically maintained under Committee F01 / Subcommittee F01.17).
• Number of pages: 3 (concise specification).

Scope

This standard applies to pure titanium sputtering targets used as raw materials in the fabrication of semiconductor electronic devices and thin films. It sets purity grade levels (total metallic impurity limits), physical attributes, analytical methods for trace and nonmetallic impurities, grain size considerations, and packaging/ordering information to ensure material cleanliness and traceability for electronic thin‑film applications.

Key topics and requirements

• Grade designations (examples: 4N = 99.99% Ti; 4N5 = 99.995% Ti; 5N = 99.999% Ti) and maximum total metallic impurity content.
• Suite of metallic elements to be analyzed and reported (Al, Fe, Si, V, Cr, Pb, Ag, Zn, Co, Li, K, Na, Zr, Cu, Mg, Th, B, Mn, Sn, Mo, W, Ni, U, etc.).
• Analytical methods: trace metallic impurities by glow discharge mass spectrometry (GDMS) with low nominal MDLs; carbon, oxygen, sulfur by fusion and gas extraction; hydrogen, nitrogen, and other nonmetals as specified.
• Requirements for manufacturing cleanliness (free of dirt/oils) and agreed limits for nonmetallic impurities and particle contamination.
• Grain size requirements (average and maximum grain sizes to be agreed between purchaser and supplier).
• Ordering and certification information: grade designation, agreed impurity limits, and lot representative sampling and reporting.

Typical use and users

Primary users are manufacturers and suppliers of sputtering targets, material engineers, and process engineers in semiconductor fabs and thin‑film electronics companies who specify target material for physical vapor deposition (PVD) processes. Procurement, quality assurance, and analytical laboratories use the specification to set acceptance criteria and test methods for titanium target materials.

Related standards

The specification was maintained under ASTM Committee F01 on Electronics (Subcommittee F01.17 on Sputter Metallization). It has historically referenced or worked alongside other ASTM and industry standards for material analysis and sputtering processes. Note: ASTM F1709 was withdrawn in November 2023 and the committee was disbanded; the withdrawn notice indicates no direct replacement. Users should consult current ASTM catalogues and relevant semiconductor equipment/material standards for alternative or updated specifications.

Keywords

titanium, sputtering target, high purity, thin film, semiconductors, GDMS, impurity limits, 4N, 4N5, 5N, PVD.

FAQ

Q: What is this standard?

A: ASTM F1709 −97 (reapproved 2016) is a short ASTM specification that defines high‑purity titanium sputtering target grades, impurity limits, analytical methods, and related ordering and packaging requirements for electronic thin‑film applications.

Q: What does it cover?

A: It covers pure titanium sputtering targets used as raw material in semiconductor and electronic thin‑film fabrication, specifying grade purity levels (4N / 4N5 / 5N), suites of metallic elements to be analyzed, methods such as GDMS and fusion/gas extraction for nonmetals, grain size expectations, cleanliness, and buyer–seller ordering information.

Q: Who typically uses it?

A: Target manufacturers and suppliers, procurement and QA personnel in semiconductor and thin‑film electronics industries, and analytical laboratories that certify target chemistry and cleanliness.

Q: Is it current or superseded?

A: The document was reapproved in 2016 but was withdrawn by ASTM in November 2023; the withdrawal notice indicates it was withdrawn without replacement following actions affecting Committee F01. Users should treat it as withdrawn and consult current ASTM resources or alternative standards for up‑to‑date requirements.

Q: Is it part of a series?

A: It was administered under ASTM Committee F01 (Electronics) and Subcommittee F01.17 on Sputter Metallization; while not numbered as part of a continuous series, it is one of several ASTM documents addressing materials and processes for electronic thin films and PVD targets.

Q: What are the key keywords?

A: Titanium sputtering target, high purity, 4N/4N5/5N, GDMS, impurity analysis, thin film, semiconductor.