St IEC 60747-7-2:1989

St IEC 60747-7-2:1989

Name in English:
St IEC 60747-7-2:1989

Name in Russian:
Ст МЭК 60747-7-2:1989

Description in English:
Semiconductor devices; discrete devices; part 7: bipolar transistors; section two: blank detail specification for case-rated bipolar transistors for low-frequency amplification

Description in Russian:
Приборы полупроводниковые. Дискретные приборы и интегральные схемы. Раздел 2: Типовая форма частных технических условий на биполярные транзисторы для низкочастотного усиления с определенными параметрами корпуса

Document status:

Electronic (PDF)

Page count:

Delivery time (for English version):
1 business day

Delivery time (for Russian version):
5 business days


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