IEC 63229-2021 PDF

Full title and description

Semiconductor devices — Classification of defects in gallium nitride epitaxial film on silicon carbide substrate. This International Standard gives guidelines for the definition and classification of defects observed in GaN epitaxial films grown on SiC substrates, illustrated with schematic drawings and micrographs (optical microscope and transmission electron microscope) to serve as a reference catalogue for as‑grown material.

Abstract

IEC 63229:2021 (Edition 1.0) establishes a common nomenclature and classification framework for defects in as‑grown GaN epitaxial films on SiC substrates. The document lists and illustrates typical defect types, provides definition criteria and example imagery to support identification, and explicitly excludes defects introduced by subsequent processing steps. Its purpose is to harmonize defect description for research, quality control and device development in the GaN-on-SiC community.

General information

• Status: Active international standard
• Publication date: 7 April 2021
• Publisher: International Electrotechnical Commission (IEC), TC 47 — Semiconductor devices
• ICS / categories: 31.080.99 (Semiconductor devices)
• Edition / version: Edition 1.0
• Number of pages: 21

Scope

Defines and classifies defects that occur in GaN epitaxial films grown on silicon carbide (SiC) substrates in the as‑grown state. The standard provides visual examples (schematics, optical microscope images, TEM images) for each defect class to aid identification. It does not address defects produced by later processing steps (for example lithography, etch, metallization or packaging) nor does it prescribe test methods or acceptance criteria for finished devices.

Key topics and requirements

• Unified definitions and nomenclature for defects in GaN on SiC (e.g., dislocations, stacking faults, pits, V‑pits, inclusions, hillocks, voids, cracks).
• Illustrative catalogue using schematic diagrams, optical micrographs and transmission electron microscope images to demonstrate defect morphology.
• Classification rules and criteria to distinguish between defect types and to separate as‑grown defects from process‑induced anomalies.
• Guidance on descriptive reporting (terminology and characteristic features) to improve consistency across labs and suppliers.
• Explicit exclusions clarifying that post‑growth process defects and device‑level failure modes are outside the document scope.

Typical use and users

Used by semiconductor epitaxy and device development teams, wafer and epitaxial growth process engineers, failure‑analysis and materials characterization laboratories, quality assurance groups, and researchers working on GaN on SiC substrates. The standard helps in consistent defect reporting during R&D, incoming wafer inspection, yield improvement programs and cross‑site communication between suppliers and integrators.

Related standards

Complementary guidance and requirements can be found in other IEC documents produced by TC 47 and in evolving reliability/qualification work from semiconductor standardization bodies (for example JEDEC working groups addressing wide‑bandgap device qualification). Users should consult related IEC TC 47 publications and industry reliability/qualification guidance for device‑level tests and acceptance criteria.

Keywords

GaN, gallium nitride, silicon carbide, SiC, epitaxial film, epitaxy, defects, defect classification, threading dislocation, stacking fault, pits, V‑pits, TEM, optical microscopy, semiconductor materials, TC 47.

FAQ

Q: What is this standard?

A: IEC 63229:2021 is an International Standard that defines and classifies defects in GaN epitaxial films grown on SiC substrates, providing an illustrated catalogue and agreed terminology for as‑grown material.

Q: What does it cover?

A: It covers identification, definition and classification of defects observed in as‑grown GaN on SiC, illustrated with schematic drawings, optical microscope images and TEM images. It does not cover defects introduced by later processing or give device acceptance tests.

Q: Who typically uses it?

A: Epitaxy and process engineers, materials and failure analysis laboratories, QA/yield teams, device designers and academic researchers concerned with GaN film quality on SiC substrates.

Q: Is it current or superseded?

A: As published on 7 April 2021, IEC 63229:2021 is the current (first) edition. The IEC record indicates the document is active with an intended stability period (stability date) following publication; users should check official IEC catalog records for any amendments or updates beyond the 2021 edition.

Q: Is it part of a series?

A: IEC 63229:2021 is part of the broader set of semiconductor standards overseen by IEC TC 47; related IEC 632xx/632xx‑series publications and technical reports address other topics for wide‑bandgap semiconductor devices, materials and reliability.

Q: What are the key keywords?

A: GaN, SiC, epitaxial film, defect classification, TEM, optical microscopy, threading dislocation, stacking fault, V‑pit.