BS EN 62047-25-2016 PDF

Full title and description

STB BS EN 62047-25:2016 — Semiconductor devices — Micro‑electromechanical devices — Part 25: Silicon based MEMS fabrication technology — Measurement method of pull‑press and shearing strength of micro bonding area. This document specifies in‑situ test structures and procedures to measure tensile/compressive (pull‑press) and shearing strength of micro bonding areas used in silicon‑based MEMS fabrication.

Abstract

This standard defines requirements for test‑structure design, fabrication and test environment, and gives step‑by‑step procedures for in‑situ pull‑press and shearing tests of micro bonding areas (micro‑solder, welds or bonded interfaces) produced by microelectronic and micromachining technologies. Informative annexes provide example dimensions and a worked pull‑press example.

General information

• Status: Active / current (IEC publication; adopted as EN and national variants).
• Publication date: IEC base publication 29 August 2016; British adoption (BS EN) published late 2016 (BS EN 62047-25:2016 reported 30 November 2016).
• Publisher: International Electrotechnical Commission (IEC) — also published/adopted by CENELEC as EN 62047-25:2016 and available from national bodies (BSI as BS EN 62047-25:2016; some markets list national designations such as STB).
• ICS / categories: 31.080.99 (Semiconductor devices; MEMS / sensors).
• Edition / version: IEC 62047-25 Edition 1.0 (2016) — adopted as EN 62047-25:2016 / national versions 2016–2017.
• Number of pages: IEC edition: 45 pages (file size and pagination for national publications may vary; some national PDFs report ~28–31 pages).

Scope

This standard applies to silicon‑based MEMS bonding areas fabricated by microelectronic and other micromachining technologies and specifies an in‑situ measurement method for pull‑press (tension/compression) and shearing strength of micro bonding areas. It is intended to be used on devices or test structures integrated into wafer‑level processes so bond strength can be evaluated without separate specimen preparation.

Key topics and requirements

• Definitions and normative references relevant to MEMS bond‑strength testing.
• Requirements for testing‑structure design (recommended geometries and dimensions for in‑situ test patterns).
• Fabrication requirements for test structures to ensure representative results and repeatability.
• Testing environment requirements (mounting, alignment, environmental control and instrumentation).
• Pull‑press testing method: loading setup, operation sequence, data processing and result evaluation.
• Shearing testing method: operation process and result processing for shear strength determination.
• Informative annexes with example dimensions for test structures and worked examples.

Typical use and users

Used by MEMS process engineers, device design teams, reliability and QA laboratories, academic researchers working on MEMS packaging and bonding, and equipment manufacturers providing in‑situ test setups for wafer‑level evaluation. The standard supports process development, incoming inspection and failure analysis where quantitative bond strength data are required.

Related standards

Other parts of the IEC 62047 series (for example IEC 62047‑1 — Terms and definitions) and measurement/quality management standards referenced in the foreword (example: ISO 10012 on measurement management systems). National adoptions (EN/BS/other) reproduce the IEC content and may add national forewords.

Keywords

MEMS, silicon, micro bonding area, bond strength, pull‑press, tensile strength, compressive strength, shearing strength, in‑situ testing, test structure, micromachining, semiconductor devices.

FAQ

Q: What is this standard?

A: IEC/EN 62047-25:2016 specifies an in‑situ test method and associated requirements for measuring the pull‑press (tension/compression) and shearing strength of micro bonding areas in silicon‑based MEMS.

Q: What does it cover?

A: It covers test‑structure design and fabrication requirements, testing environment and detailed procedures for pull‑press and shear tests, plus informative annexes with example dimensions and a worked example. It is intended for wafer‑level, in‑process evaluation of micro bond integrity.

Q: Who typically uses it?

A: MEMS device manufacturers, process and reliability engineers, test labs, QA groups and researchers who need standardized quantitative methods to assess micro‑bond mechanical integrity.

Q: Is it current or superseded?

A: The IEC edition 1.0 (2016) is listed as the current edition with a stability date indicated in IEC records (stability to 2026). National adoptions (EN/BS/others) reflect the 2016 publication; users should verify national implementation dates for conformity.

Q: Is it part of a series?

A: Yes — it is part of the IEC 62047 series for semiconductor/MEMS test methods; see IEC 62047‑1 for terms and related parts dealing with MEMS measurement topics.

Q: What are the key keywords?

A: MEMS, silicon, bond strength, pull‑press, shear test, in‑situ testing, test structure, micromachining.