BS IEC 62047-34-2019 PDF

Full title and description

STB BS IEC 62047-34-2019 — Semiconductor devices - Micro-electromechanical devices - Part 34: Test methods for MEMS piezoresistive pressure-sensitive device on wafer. This part of IEC 62047 specifies test conditions and methods for electrical characterisation, static performance and thermal performance of piezoresistive MEMS pressure‑sensitive devices at wafer level, applicable to both open‑loop and closed‑loop devices.

Abstract

IEC 62047-34:2019 describes test conditions and test methods of electrical character, static performances and thermal performances for MEMS pressure‑sensitive devices on wafer. It applies to wafer‑level testing of piezoresistive pressure sensors, including both open‑loop and closed‑loop device types, and defines procedures to obtain repeatable electrical and environmental test data for production and R&D purposes.

General information

• Status: Published / Current (base publication).
• Publication date: 5 April 2019.
• Publisher: International Electrotechnical Commission (IEC).
• ICS / categories: 31.080.99 (Other semiconductor devices); 31.140 (Piezoelectric devices).
• Edition / version: Edition 1.0 (2019).
• Number of pages: 16 pages.

Key bibliographic and status details above are taken from the IEC publication record.

Scope

This document specifies test conditions and test methods for electrical characterisation, static performance measurements and thermal performance assessments of MEMS piezoresistive pressure‑sensitive devices while still on wafer. It covers procedures for both open‑loop and closed‑loop piezoresistive MEMS pressure devices, addressing wafer handling, test setups, measurement sequences and required environmental conditions to ensure repeatable and comparable results across laboratories and production lines.

Key topics and requirements

• Test methods for electrical characterisation of piezoresistive MEMS pressure devices (IV/R‑bridge measurements, offset, sensitivity and linearity assessments).
• Procedures for static performance testing, including zero‑offset, span, hysteresis and repeatability on wafer.
• Thermal performance and temperature‑dependence tests (measurements over specified temperature ranges, thermal drift evaluation).
• Requirements and recommendations for wafer‑level test fixtures, sample conditioning and environmental control to minimise measurement variability.
• Guidance for distinguishing tests appropriate to open‑loop versus closed‑loop device operation and for documenting test reports and results.

Typical use and users

Primary users are MEMS pressure‑sensor manufacturers, wafer‑level test and characterization laboratories, semiconductor process engineers, design and test engineers in R&D and quality assurance teams, and standards bodies developing complementary test methods. The standard is used to harmonize wafer‑level test procedures, reduce variability between suppliers and labs, and support qualification and production test programs.

Related standards

IEC 62047-34 is part of the IEC 62047 series on micro‑electromechanical devices (MEMS). Relevant related parts include IEC 62047-1 (terms and definitions), earlier test‑method parts such as IEC 62047-2 and IEC 62047-3, and more recent related parts in the series addressing fabrication and measurement methods (for example newer parts published under the 62047 series). These related parts provide complementary definitions, generic MEMS specifications and additional measurement procedures used alongside Part 34.

Keywords

MEMS, piezoresistive, pressure sensor, pressure‑sensitive device, wafer‑level test, electrical characterisation, static performance, thermal performance, IEC 62047-34:2019, test methods.

FAQ

Q: What is this standard?

A: IEC 62047-34:2019 is an international standard that specifies test methods for MEMS piezoresistive pressure‑sensitive devices on wafer, covering electrical, static and thermal performance testing for both open‑loop and closed‑loop devices.

Q: What does it cover?

A: It covers test conditions and measurement procedures for electrical characterisation (e.g., bridge and resistance measurements), static performance metrics (offset, span, hysteresis, repeatability) and thermal performance (temperature dependence and drift) for wafer‑level piezoresistive pressure sensors.

Q: Who typically uses it?

A: MEMS pressure‑sensor manufacturers, wafer‑test labs, R&D and QA/test engineers, and organisations involved in MEMS device qualification and production testing use this standard to harmonize and document wafer‑level test methods.

Q: Is it current or superseded?

A: IEC 62047-34:2019 is the base publication issued 5 April 2019 and is listed as the current edition; the IEC webstore notes the publication/stability information for this edition. Users should check for any amendments or newer editions that may have been published after 2019.

Q: Is it part of a series?

A: Yes. It is part of the IEC 62047 series on semiconductor MEMS devices (micro‑electromechanical devices). The series includes parts covering terms and definitions, tensile testing, generic specifications and other measurement and test methods across MEMS device types.

Q: What are the key keywords?

A: MEMS; piezoresistive; pressure sensor; wafer‑level test; electrical characterisation; static performance; thermal performance; IEC 62047; test methods.