BS EN 62047-9-2011 (2012) PDF

Full title and description

STB BS EN 62047-9:2011 — Semiconductor devices. Micro‑electromechanical devices. Part 9: Wafer‑to‑wafer bonding strength measurement for MEMS. This document specifies test methods and specimen preparation for measuring the bonding strength of wafer‑to‑wafer bonds commonly used in MEMS fabrication (for example silicon‑to‑silicon fusion bonding and silicon‑to‑glass anodic bonding).

Abstract

This standard defines measurement procedures, apparatus requirements and specimen geometries for quantifying the strength of wafer‑to‑wafer bonds used in MEMS devices. It covers applicable bonding types, specimen preparation, recommended number of specimens and detection methods for debonding (including blister/hydrostatic, three‑point bending and edge‑load tests). A corrigendum published in March 2012 is incorporated in current copies.

General information

• Status: Published / current (international standard adopted as a European/British standard).
• Publication date: IEC base publication 13 July 2011; Corrigendum 1 published March 2012; published as BS EN 62047‑9:2011 (BSI catalogue entry published 31 January 2013).
• Publisher: British Standards Institution (BS EN adoption) — based on IEC 62047‑9:2011 produced by IEC TC 47/SC 47F (micro‑electromechanical systems).
• ICS / categories: 31.080.99 (Other semiconductor devices / MEMS related).
• Edition / version: Edition 1.0 (2011) with Corrigendum 1 (2012); adopted as EN/BS EN 62047‑9:2011.
• Number of pages: IEC edition: 49 pages (bilingual IEC publication); BS EN/British adoption copies typically published as ~30 pages in the BSI offering (publisher formatting differences).

Scope

The standard covers measurement methods for wafer‑to‑wafer bonding strength relevant to MEMS processing and assembly. It specifies applicable bond types (for example silicon‑to‑silicon fusion bonding, silicon‑to‑glass anodic bonding and other wafer bonding techniques), specimen geometries and dimensions, minimum specimen counts and environmental/test conditions. The scope addresses wafer thicknesses from thin (on the order of 10 µm) up to several millimetres and gives procedural guidance for detecting debonding and quantifying bonding strength.

Key topics and requirements

• Defined measurement methods for wafer bonds: blister (hydrostatic) tests, three‑point bending/edge load tests and other applicable force‑based methods.
• Specimen preparation rules and recommended dimensions to ensure repeatable results across bonded wafer pieces.
• Equipment and accuracy requirements — e.g., force‑applying instruments with defined accuracy (examples in the text specify tolerances such as 5 % of full scale or 500 mN, whichever is greater, for some apparatus).
• Minimum number of specimens and statistical requirements for reporting (the standard gives guidance such as using multiple specimens — specific minimums are stated for particular test methods, e.g., at least ten specimens for some blister tests).
• Environmental and detection controls — guidance on temperature/humidity control during testing and optical or pressure‑drop methods to detect debond initiation.
• Informative annexes with example bonding forces and example fabrication steps for three‑point bending specimens to aid test implementation.

Typical use and users

Used by MEMS process and test engineers, semiconductor packaging and reliability labs, failure‑analysis teams, research laboratories and standards bodies. Typical applications include qualification of wafer bonding processes, incoming inspection of bonded wafer pairs, R&D process comparison, and verification of bond strength during product development and reliability studies.

Related standards

This part is one of the IEC 62047 series for MEMS test methods and specifications (other parts cover generic specifications, micro‑pillar compression, BAW resonator tests, bending fatigue tests, etc.). It is published alongside EN/BS EN adoptions and is associated with national adoptions and corrigenda (IEC 62047‑9:2011/COR1:2012). Relevant adjacent standards include other parts of IEC 62047 and related mechanical test standards such as tensile and bend testing standards (for example EN/ISO tensile test references used for material test context).

Keywords

MEMS, wafer bonding, bonding strength, adhesion test, blister test, hydrostatic pressure, three‑point bending, wafer‑to‑wafer, bond qualification, semiconductor devices, test methods.

FAQ

Q: What is this standard?

A: It is IEC 62047‑9:2011 — a MEMS test standard for measuring wafer‑to‑wafer bonding strength, adopted as EN/BS EN 62047‑9:2011. A corrigendum was published in March 2012 and is incorporated in current copies.

Q: What does it cover?

A: Procedures and apparatus requirements for quantifying the mechanical strength of wafer bonds used in MEMS — including specimen geometry, test methods (blister/hydrostatic, three‑point bending/edge load, etc.), detection of debonding and reporting requirements. It addresses typical wafer thickness ranges from about 10 µm up to several millimetres.

Q: Who typically uses it?

A: MEMS manufacturers, process and reliability engineers, test laboratories, academic researchers working on bonded wafer processes, and certification/quality teams responsible for process validation.

Q: Is it current or superseded?

A: As published, IEC 62047‑9:2011 (with Corrigendum 1, 2012) is the current edition of this part. The IEC entry shows stability planning through later years; national adoptions (EN/BS EN) incorporate the same technical content. Always check your national standards publisher for the latest status or any subsequent amendments.

Q: Is it part of a series?

A: Yes — it is Part 9 of the IEC 62047 series (semiconductor devices — micro‑electromechanical devices). The series contains other parts addressing generic MEMS specifications and specific mechanical test methods.

Q: What are the key keywords?

A: MEMS, wafer bonding, bond strength, blister test, three‑point bending, hydrostatic pressure, adhesion testing, semiconductor devices.