ASTM F1212-89 (2002) PDF

Full title and description

ASTM F1212‑89 (2002) — Standard Test Method for Thermal Stability Testing of Gallium Arsenide Wafers. This short, destructive test method specifies procedures to determine whether semi‑insulating gallium arsenide (GaAs) wafer material remains semi‑insulating after exposure to the high temperatures typically used to activate implanted layers in device fabrication.

Abstract

The standard describes a controlled, apparatus‑independent heating and measurement procedure applied to representative GaAs wafer samples to reveal bulk impurities or conditions that cause loss of semi‑insulating behavior when wafers are subjected to thermal activation cycles. The method emphasizes simplicity and safety, is directly applicable to uncapped and unimplanted samples, and is intended to predict the behavior of production wafers whose manufacturing history matches the test sample.

General information

• Status: Withdrawn (2008) — historical/test method; no longer active in ASTM catalog.
• Publication date: Reprinted/reissued as F1212‑89(2002) (original adoption 1989; republished/recorded 2002).
• Publisher: ASTM International.
• ICS / categories: 31.080 (Semiconductor devices) — semiconductor device test methods / electronics materials.
• Edition / version: Designation F1212‑89 (original 1989); shown in catalogs as F1212‑89(2002) (reprint/reissue).
• Number of pages: 4 pages (concise test method document).

Scope

This destructive test method determines whether a given sample of semi‑insulating GaAs will remain semi‑insulating after exposure to high temperatures used for implanted layer activation. It assumes wafers with the same manufacturing history will respond similarly. The procedure is directly applicable to uncapped, unimplanted samples; extension to capped or implanted samples is possible but requires controlled comparative testing. The method is sensitive to bulk impurities in the wafer and is not designed to detect surface or process‑induced contaminants except where they interfere with the measurement.

Key topics and requirements

• Preparation of representative wafer test specimens (uncapped/unimplanted by default).
• Controlled thermal exposure profile to simulate activation anneals used in device processing.
• Post‑thermal electrical measurement(s) to determine retention or loss of semi‑insulating behavior (resistivity/conductivity criteria and pass/fail determination).
• Safety and apparatus guidance emphasizing simple, reproducible setups independent of specific furnace equipment.
• Recognition of method limitations — detects bulk impurities but not surface/process contaminants except as interferences; destructive to tested specimens.

Typical use and users

Used historically by GaAs wafer manufacturers, process development and yield engineers, incoming inspection and quality assurance labs, and failure analysis groups to screen wafer lots or production processes for bulk thermal stability prior to device fabrication. Research laboratories working on GaAs epitaxy and implant activation procedures also applied the method for development comparisons.

Related standards

Other ASTM test methods and practices addressing GaAs wafer characterization and semiconductor test methods (for example test methods for photoluminescence, epitaxial sample preparation, and related electronic materials test methods) and international device test series such as the IEC/IEC 60749 mechanical and climatic/device test methods may be consulted for complementary measurements and broader device qualification procedures. Users should consult current ASTM and IEC/JEDEC catalogs for the up‑to‑date set of applicable test methods.

Keywords

GaAs, gallium arsenide, thermal stability, wafer testing, semi‑insulating, anneal, implant activation, destructive test, semiconductor test method, ASTM F1212.

FAQ

Q: What is this standard?

A: ASTM F1212‑89(2002) is a short, destructive test method that specifies how to thermally stress GaAs wafer samples and measure whether they retain semi‑insulating electrical behavior after exposure to activation temperatures used in semiconductor processing.

Q: What does it cover?

A: It covers specimen selection and preparation (primarily uncapped and unimplanted samples), a controlled heating/anneal procedure, and post‑anneal electrical measurements to detect bulk impurities or instability that would compromise wafer resistivity after high‑temperature processing. It notes limitations regarding surface or process‑induced impurities.

Q: Who typically uses it?

A: Wafer manufacturers, process engineers, QA/quality-control laboratories, and research groups in semiconductor fabrication and device development — especially those working with GaAs material and implant activation processes.

Q: Is it current or superseded?

A: The method was withdrawn from the ASTM catalog in 2008 and is therefore not a current active ASTM standard. Users seeking current, authoritative test procedures should consult the latest ASTM, IEC, and JEDEC publications or contact ASTM International for replacement or alternative methods.

Q: Is it part of a series?

A: It was developed under ASTM Committee F01 (Electronics) and relates technically to other ASTM F‑series test methods for GaAs and electronic materials; it is not a numbered "series" in itself but is grouped with other semiconductor/electronics test methods and is often used alongside IEC/JEDEC device test standards for comprehensive qualification.

Q: What are the key keywords?

A: GaAs, gallium arsenide, thermal stability testing, wafer, semi‑insulating, anneal, implant activation, destructive test, ASTM F1212.